Автор: Frank Ortmann, Stephan Roche, Sergio O. Valenzuela Название: Topological Insulators: Fundamentals and Perspectives Издательство: Wiley-VCH Год: 2015 ISBN: 978-3527337026 Язык: English Формат: pdf Размер: 12,4 mb Страниц: 432
First theoretically predicted and then practically discovered just a few years ago, topological insulators are considered as extremely promising candidates to revolutionize our electronic devices. With the help of newly developed characterization techniques it is now possible to get insights into the electronic structure of this novel class of materials. Topological insulators are similar in the electronic structure to conventional semiconductors, but exhibit remarkable properties. They are expected to produce new device functionalities, enabling low-power-consumption applications based on dissipation-less edge channels and spintronic devices, relying on the unique locking of the spin to the momentum in the topological surface states. The search for Majorana fermions and their impact to topological quantum computing are great inspirations in the field.
The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angleresolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic states, the Dirac point, quantum Hall effects and Majorana fermions are illuminated in individual chapters and are described in a clear and logical form. Written by an international team of experts, many of them directly involved in the very first discovery of topological insulators, the book provides the readers with the knowledge they need to understand the electronic behavior of these unique materials. Being more than a reference work, this book is essential for newcomers and advanced researchers working in the field of topological insulators.