Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second EditionКНИГИ » АППАРАТУРА
Название: Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition Автор: John E. Ayers and Tedi Kujofsa Издательство: CRC Press Год: 2016 Формат: PDF Размер: 12 Мб Язык: английский / English
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices.
To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
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Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition 
