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 Название: Krishna's Fundamental of Electronic Devices
Автор: Prof Dinesh, Vaibhav Srivastava
Издательство: Krishna Prakashan Media Pvt Ltd.
Год: 2020
Страниц: 292
Язык: английский
Формат: pdf (true), epub
Размер: 24.0 MB
The book contains all topics discussed in detail as an outcome of years invested in teaching the course Semiconductor Materials & Devices. The best efforts have been given to produce an error-free book, however, there is always a scope of improvement. We shall feel highly obliged if we receive comments from students and from our dear faculty fraternity.
Contents:
SYLLABUS- FUNDAMENTAL OF ELECTRONIC DEVICES, UNIT - I
Crystal Properties and charge Carriers in Semiconductors: Elemental and compound semiconductor materials, crystal lattice structure, Bonding forces and energy bands in solids, charge carriers in semiconductors, carrier concentrations, drift of carriers in electric and magnetic fields.
UNIT - II
Excess Carriers in Semiconductors: Optical absorption, luminescence, carrier life time and photo conductivity, diffusion of carriers.
UNIT - III
Junction Properties: Equilibrium conditions, biased junctions, steady state conditions, reverse bias breakdown, transient and AC conditions. Metal semiconductor junctions.
UNIT - IV
Transistors: Metal-semiconductor-field-effect-transistors (MESFET), Metal-insulator-semiconductor-field-effect-transistors (MISFET), Metal oxide semiconductor field effect transistor (MOSFET): Construction, operation and characteristics of above devices. Bipolar Junction Transistors: Fundamentals of BJT operation, amplification with BJTs.
UNIT - V
Some Special Devices: Photodiodes, photo detectors, solar cell, light emitting diodes, semiconductor lasers, light emitting materials. Tunnel Diode: Degenerate semiconductors, IMPATT diode. The Transferred Electron Mechanism: The GUNN diode. PNPN diode, semiconductors controlled rectifier (SCR). Bilateral Devices: DIAC, TRIAC, IGBT.
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Автор: Ingvar16 12-10-2020, 16:21 | Напечатать |
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