Nitride Wide Bandgap Semiconductor Material and Electronic DevicesКНИГИ » ТЕХНИЧЕСКИЕ НАУКИ
Название: Nitride Wide Bandgap Semiconductor Material and Electronic Devices Автор: Yue Hao and Jin Feng Zhang Издательство: CRC Press Год: 2016 Формат: PDF Размер: 21 Мб Язык: английский / English
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Vertical GaN and SiC Power Devices Название: Vertical GaN and SiC Power Devices Автор: Kazuhiro Mochizuki Издательство: Artech House Год: 2018 Формат: PDF Размер: 2 Мб Язык:...
2D Materials: Properties and Devices Название: 2D Materials: Properties and Devices Автор: Phaedon Avouris and Tony F. Heinz Издательство: Cambridge University Press Год: 2017 Формат:...
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Nitride Wide Bandgap Semiconductor Material and Electronic Devices 
