Название: Electromigration in Metals: Fundamentals to Nano-Interconnects Автор: Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev Издательство: Cambridge University Press Год: 2022 Страниц: 440 Размер: 17.62 МБ Формат: PDF Язык: English
Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
Provides a comprehensive review of the topic, building up from fundamental physics to applications Explains methodologies for statistical analysis, from simple 1D to complex 3D models, which can be used for step-by-step development Utilises a multidisciplinary approach to explain electromigration as a physical phenomenon and its role as a major challenge in chip reliability
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Electromigration in Metals: Fundamentals to Nano-Interconnects 
