Название: Wide Bandgap Semiconductor-Based Electronics Автор: Fan Ren, Stephen J. Pearton Издательство: IOP Publishing Год: 2020 Страниц: 582 Язык: английский Формат: pdf (true) Размер: 81.5 MB
Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems.
There is increasing interest in the development of wide bandgap and ultra-wide bandgap semiconductors for use in more efficient power switching devices and solar-blind UV detection. As just one example, electricity currently accounts for ~38% of primary energy consumption in the US and is the fastest growing form of end-use energy. Achieving high-power conversion efficiency requires low-loss power semiconductor switches. Today’s incumbent power, Si-based switch technology, includes metal–oxide field effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), and thyristors. However, silicon power semiconductor devices have several important limitations, including high switching losses and low switching frequencies. The relatively low Si bandgap of 1.1 eV and the low critical electric field (approximately 30 V per micron) require high voltage devices to achieve a substantial critical thickness. The large thickness translates to devices with high resistance and associated conduction losses and low switching frequency. Silicon high voltage power MOSFETs require large die areas to keep the conduction losses low. Power electronics play a significant role in the delivery of electricity as they control and convert electrical power to provide optimal conditions for transmission, distribution, and load-side consumption.
Therefore, advances in power electronics have the potential for enormous energy efficiency and a range of operating condition improvements. The development of advanced power electronic devices with exceptional efficiency, reliability, functionality, and form factors will provide a competitive commercial advantage in the deployment of advanced energy technologies. Power semiconductor devices based on wide bandgap materials, such as SiC and GaN, offer the potential of breakthrough performance for a wide range of applications. Advances in wide bandgap (WBG) semiconductor materials are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. The higher critical electric fields in these WBG materials (2 MV cm-1) enable thinner, more highly doped voltage-blocking layers, which can reduce on-resistance by two orders of magnitude in the majority carrier architectures, such as MOSFETs, relative to an equivalent Si device.
The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas.
Key Features:
Provides comprehensive coverage of wide bandgap semiconductor-based electronics Covers both materials and devices Includes cutting-edge research not covered in other books Very experienced editors - they have produced 19 other books in related areas
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Wide Bandgap Semiconductor-Based Electronics 
Название: Wide Bandgap Semiconductor-Based Electronics
